DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fortunato, Elvira | ko |
dc.contributor.author | Figueiredo, Vitor | ko |
dc.contributor.author | Barquinha, Pedro | ko |
dc.contributor.author | Elamurugu, Elangovan | ko |
dc.contributor.author | Barros, Raquel | ko |
dc.contributor.author | Goncalves, Goncalo | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Martins, Rodrigo | ko |
dc.date.accessioned | 2015-11-20T12:50:42Z | - |
dc.date.available | 2015-11-20T12:50:42Z | - |
dc.date.created | 2014-04-17 | - |
dc.date.created | 2014-04-17 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.96, no.19 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201729 | - |
dc.description.abstract | Copper oxide (Cu2O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm(2)/V s and an on/off ratio of 2 x 10(2). (C) 2010 American Institute of Physics. [doi:10.1063/1.3428434] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | BARRIER SOLAR-CELLS | - |
dc.subject | ELECTRICAL-CONDUCTIVITY | - |
dc.subject | COPPER-OXIDE | - |
dc.subject | DEPOSITION | - |
dc.subject | DEFECTS | - |
dc.title | Thin-film transistors based on p-type Cu2O thin films produced at room temperature | - |
dc.type | Article | - |
dc.identifier.wosid | 000277756400026 | - |
dc.type.rims | ART | - |
dc.citation.volume | 96 | - |
dc.citation.issue | 19 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3428434 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Fortunato, Elvira | - |
dc.contributor.nonIdAuthor | Figueiredo, Vitor | - |
dc.contributor.nonIdAuthor | Barquinha, Pedro | - |
dc.contributor.nonIdAuthor | Elamurugu, Elangovan | - |
dc.contributor.nonIdAuthor | Barros, Raquel | - |
dc.contributor.nonIdAuthor | Goncalves, Goncalo | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Martins, Rodrigo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | carrier mobility | - |
dc.subject.keywordAuthor | copper compounds | - |
dc.subject.keywordAuthor | crystal structure | - |
dc.subject.keywordAuthor | field effect transistors | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | sputter deposition | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | transparency | - |
dc.subject.keywordPlus | BARRIER SOLAR-CELLS | - |
dc.subject.keywordPlus | ELECTRICAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | COPPER-OXIDE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | DEFECTS | - |
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