DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Himchan | ko |
dc.contributor.author | Yoon, Sung-Min | ko |
dc.contributor.author | Ryu, Min Ki | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Yang, Shinhyuk | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2015-11-20T12:48:46Z | - |
dc.date.available | 2015-11-20T12:48:46Z | - |
dc.date.created | 2014-04-17 | - |
dc.date.created | 2014-04-17 | - |
dc.date.issued | 2010-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.97, no.18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201711 | - |
dc.description.abstract | We investigated the visible photon accelerated negative bias instability (NBI) in amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). As reported in previous works, the rigid shift in transfer curves with insignificant changes in field-effect mobility and subthreshold swing was observed. On the other hand, there is substantial change in capacitance-voltage characteristics caused by created subgap states. The suggested nature of created states is the ionized oxygen vacancy (V(O)(2+)) by the combination of visible light and negative bias. The generated V(O)(2)+ states enhance the NBI under illumination as increased deep hole trapping centers. Furthermore, the photoexcitation of V(O) to stable V(O)(2+) yields excess free carriers in conduction band. The increased carrier density also enhances the negative shift in turn-on voltage of a-IGZO TFT. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3510471] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | OXIDE SEMICONDUCTOR A-INGAZNO4-X | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | TRANSPARENT | - |
dc.title | Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000283934100072 | - |
dc.identifier.scopusid | 2-s2.0-78649300313 | - |
dc.type.rims | ART | - |
dc.citation.volume | 97 | - |
dc.citation.issue | 18 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3510471 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Oh, Himchan | - |
dc.contributor.nonIdAuthor | Yoon, Sung-Min | - |
dc.contributor.nonIdAuthor | Ryu, Min Ki | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Yang, Shinhyuk | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR A-INGAZNO4-X | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
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