DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ji, Kwang Hwan | ko |
dc.contributor.author | Kim, Ji-In | ko |
dc.contributor.author | Mo, Yeon-Gon | ko |
dc.contributor.author | Jeong, Jong Han | ko |
dc.contributor.author | Yang, Shinhyuk | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Ryu, Myung-Kwan | ko |
dc.contributor.author | Lee, Sang-Yoon | ko |
dc.contributor.author | Jeong, Jae Kyeong | ko |
dc.date.accessioned | 2015-11-20T12:48:20Z | - |
dc.date.available | 2015-11-20T12:48:20Z | - |
dc.date.created | 2014-04-17 | - |
dc.date.created | 2014-04-17 | - |
dc.date.issued | 2010-12 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.31, no.12, pp.1404 - 1406 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201707 | - |
dc.description.abstract | This letter examines the effect of the gate dielectric material on the light-induced bias-temperature instability of an In-Ga-Zn-O (IGZO) thin-film transistor (TFT). After applying positive and negative bias stresses, the SiNx-gated TFT exhibited inferior stability to the SiO2-gated TFT, which was explained by the charge trapping mechanism. However, light illumination under a negative bias stress accelerated the negative displacement of the threshold voltage (V-th) of the SiNx-gated IGZO TFT compared to that of the SiO2-gated TFT. This was attributed to the injection of photocreated hole carriers into the underlying gate dielectric bulk region as well as the hole trapping at the gate/channel interface. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and SiO2 Gate Dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000284541400016 | - |
dc.identifier.scopusid | 2-s2.0-78649446577 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 1404 | - |
dc.citation.endingpage | 1406 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2010.2073439 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Ji, Kwang Hwan | - |
dc.contributor.nonIdAuthor | Kim, Ji-In | - |
dc.contributor.nonIdAuthor | Mo, Yeon-Gon | - |
dc.contributor.nonIdAuthor | Jeong, Jong Han | - |
dc.contributor.nonIdAuthor | Yang, Shinhyuk | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Ryu, Myung-Kwan | - |
dc.contributor.nonIdAuthor | Lee, Sang-Yoon | - |
dc.contributor.nonIdAuthor | Jeong, Jae Kyeong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | a-InGaZnO | - |
dc.subject.keywordAuthor | amorphous semiconductor | - |
dc.subject.keywordAuthor | bias stability | - |
dc.subject.keywordAuthor | multicomponent oxide semiconductor | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
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