DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Tong-Hun | ko |
dc.contributor.author | Yang, Ik-Seok | ko |
dc.contributor.author | Kwon, Oh-Kyong | ko |
dc.contributor.author | Ryu, Min-Ki | ko |
dc.contributor.author | Byun, Choon-Won | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2015-11-20T12:46:51Z | - |
dc.date.available | 2015-11-20T12:46:51Z | - |
dc.date.created | 2014-04-17 | - |
dc.date.created | 2014-04-17 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.3 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201693 | - |
dc.description.abstract | Two inverter architectures are proposed to be integrated on panels for flat panel display applications using only n-type amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The proposed cross-coupled (CC) inverter uses the positive feedback effect of its CC structure to reduce the static current and increase the output voltage swing when using depletion mode n-type amorphous IGZO TFTs. The other proposed cross-coupled and bootstrapping (CCB) inverter also uses the cross-coupled structure and includes a capacitor for the bootstrapping effect to increase the operating frequency. The measured results show that the output voltage swing of the proposed CC inverter is from 0 to 14.50 V and that of the CCB inverter is from 0.15 to 14.57 V when VDD is 15 V at 20 kHz and the load capacitance is 103.0 pF. The power consumption of the CC and CCB inverters are 1.4 and 2.5mW, respectively, which are 29.3 and 53.4% of the power consumption of the ratioed inverter. (c) 2011 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000288651400011 | - |
dc.type.rims | ART | - |
dc.citation.volume | 50 | - |
dc.citation.issue | 3 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1143/JJAP.50.03CB06 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Hwang, Tong-Hun | - |
dc.contributor.nonIdAuthor | Yang, Ik-Seok | - |
dc.contributor.nonIdAuthor | Kwon, Oh-Kyong | - |
dc.contributor.nonIdAuthor | Ryu, Min-Ki | - |
dc.contributor.nonIdAuthor | Byun, Choon-Won | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
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