Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeon, Kiseok | ko |
| dc.contributor.author | Shin, Seung Wook | ko |
| dc.contributor.author | Jo, Jaeseung | ko |
| dc.contributor.author | Kim, Myung Sang | ko |
| dc.contributor.author | Shin, Jae Cheol | ko |
| dc.contributor.author | Jeong, Chaehwan | ko |
| dc.contributor.author | Lim, Jun Hyung | ko |
| dc.contributor.author | Song, Junho | ko |
| dc.contributor.author | Heo, Jaeyeong | ko |
| dc.contributor.author | Kim, Jin Hyeok | ko |
| dc.date.accessioned | 2015-11-20T09:51:06Z | - |
| dc.date.available | 2015-11-20T09:51:06Z | - |
| dc.date.created | 2014-11-24 | - |
| dc.date.created | 2014-11-24 | - |
| dc.date.issued | 2014-11 | - |
| dc.identifier.citation | CURRENT APPLIED PHYSICS, v.14, no.11, pp.1591 - 1595 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/201125 | - |
| dc.description.abstract | High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices. | - |
| dc.language | English | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.subject | ROOM-TEMPERATURE | - |
| dc.subject | TRANSISTORS | - |
| dc.subject | SEMICONDUCTOR | - |
| dc.subject | DEPOSITION | - |
| dc.subject | INGAZNO | - |
| dc.title | Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000343693200033 | - |
| dc.identifier.scopusid | 2-s2.0-84907664749 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 14 | - |
| dc.citation.issue | 11 | - |
| dc.citation.beginningpage | 1591 | - |
| dc.citation.endingpage | 1595 | - |
| dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
| dc.identifier.doi | 10.1016/j.cap.2014.08.022 | - |
| dc.contributor.nonIdAuthor | Jeon, Kiseok | - |
| dc.contributor.nonIdAuthor | Jo, Jaeseung | - |
| dc.contributor.nonIdAuthor | Kim, Myung Sang | - |
| dc.contributor.nonIdAuthor | Shin, Jae Cheol | - |
| dc.contributor.nonIdAuthor | Jeong, Chaehwan | - |
| dc.contributor.nonIdAuthor | Lim, Jun Hyung | - |
| dc.contributor.nonIdAuthor | Song, Junho | - |
| dc.contributor.nonIdAuthor | Heo, Jaeyeong | - |
| dc.contributor.nonIdAuthor | Kim, Jin Hyeok | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
| dc.subject.keywordAuthor | Indium gallium zinc oxide | - |
| dc.subject.keywordAuthor | Electron-beam irradiation | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | TRANSISTORS | - |
| dc.subject.keywordPlus | SEMICONDUCTOR | - |
| dc.subject.keywordPlus | DEPOSITION | - |
| dc.subject.keywordPlus | INGAZNO | - |
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