Browse "School of Electrical Engineering(전기및전자공학부)" by Subject INDUCED LEAKAGE CURRENT

Showing results 1 to 5 of 5

1
Does short wavelength lithography process degrade the integrity of thin gate oxide?

Kim, SJ; Cho, Byung Jin; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; et al, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000-10

2
Electron-beam irradiation-induced gate oxide degradation

Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6731 - 6735, 2000-12

3
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

Chong, PF; Cho, Byung Jin; Chor, EF; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185, 2000-04

4
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Ang, CH; Ling, CH; Cho, Byung Jin; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11

5
Reliability of thin gate oxides irradiated under X-ray lithography conditions

Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04

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