Showing results 1 to 8 of 8
Dislocation scatterings in p-type Si1-xGex under weak electric field Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.26, no.49, 2015-12 |
Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Jeong, Ho Jin; Park, Juhyuk; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.393 - 399, 2024-01 |
Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques Oh, Hoon Jung; Choi, Kyu Jin; Loh, Wei Yip; Htoo, Thwin; Chua, Soo Jin; Cho, Byung Jin, JOURNAL OF APPLIED PHYSICS, v.102, no.5, 2007-09 |
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04 |
p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01 |
SiGe on insulator MOSFET integrated with Schottky source/drain and HfO2/TaN gate stack Gao, Fei; Lee, S. J.; Rui, Li; Cho, Byung Jin; Balakumar, S.; Tung, Chih-Hang; Chi, D. Z.; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.7, pp.222 - 224, 2006-05 |
Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; Kim, Bong Ho; Ahn, Seung-Yeop; Kim, SangHyeon, OPTICS EXPRESS, v.29, no.12, pp.18037 - 18058, 2021-06 |
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04 |
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