Showing results 1 to 6 of 6
Doping of Al-catalyzed Vapor-liquid-solid Grown Si Nnanowires Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Zhu, HC; Gu, HL; Liew, YF, 2007 MRS Spring Meeting, pp.0 - 0, 2007-04-09 |
Fabrication and characterization of 65nm gate length p-MOSFET integrated with bottom up grown Si nanowire Cho, Byung Jin; Yang, WF; Whang, SJ; Lee, SJ; Zhu, HC, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
High quality Si1-xGex nanowire and its application to MOSFET integrated with HfO2/TaN/Ta gate stack Cho, Byung Jin; Yang, WF; Lee, SJ; Whang, SJ; Lim, SY; Kwong, DL, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18 |
Schottky-Barrier Si nanowire MOSFET: effects of Source/Drain metals and gate dielectrics Cho, Byung Jin; Yang, WF; Whang, SJ; Lee, SJ; Zhu, HC; Gu, HL, 2007 MRS Spring Meeting, pp.0 - 0, 2007-04-09 |
Substrate dependence of growth of single crystalline Si1-xGex nanowires and performance of MOSFET Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Zhu, HC; Liew, YF, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Liew, YF; Kwong, DL, IEEE-Nanotech 2007, pp.0 - 0, 2007-08-02 |
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