Showing results 1 to 5 of 5
Boron profile narrowing in laser-processed silicon after rapid thermal anneal Poon, CH; Tan, LS; Cho, Byung Jin; See, A; Bhat, M, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.1, pp.80 - 83, 2004-01 |
Dopant loss mechanism in n(+)/p germanium junctions during rapid thermal annealing Poon, CH; Tan, LS; Cho, Byung Jin; Du, AY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.12, pp.895 - 899, 2005-10 |
Electrical evaluation of laser annealed junctions by Hall measurement Cho, Byung Jin; Poon, DCH; Tan, LS; Bhat, M; Chan, L, 2nd International Conference on Materials for Advanced Technologies, pp.578 - 578, 2003-12-11 |
Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET Cho, Byung Jin; Poon, D; Tan, LS; Du, AY; Chan, L, 3rd International Conference on Materials for Advanced Technologies, pp.5 - 5, 2005-07-03 |
Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization Cho, Byung Jin; Poon, D; Tan, LS; Bhat, M; See, A, IEEE 4th International Workshop on Junction Technology (IWJT-2004), pp.22 - 26, 2004-03-15 |
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