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Showing results 1 to 7 of 7

1
A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sung-Ho; Kim, Chung-Jin; Ahn, Jae-Hyuk; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.6, pp.632 - 634, 2008-06

2
Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device

Park, Jong-Kyung; Park, Young-Min; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS EXPRESS, v.3, no.9, 2010-08

3
Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04

4
Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory

Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.78 - 81, 2009-01

5
High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR-type Flash Memory

Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.3, pp.265 - 268, 2009-03

6
Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Im, Mae-Soon; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783, 2008-07

7
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices

Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02

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