Showing results 1 to 4 of 4
Crystallized HfLaO embedded tetragonal ZrO2 for dynamic random access memory capacitor dielectrics Shin, Yunsang; Min, Kyung Kyu; Lee, Seok-Hee; Lim, Sung Kyu; Oh, Jae Sub; Lee, Kee-Jeung; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.98, no.17, 2011-04 |
Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method Shin, Yunsang; Chung, Wonil; Seo, Yujin; Lee, Choong-Ho; Sohn, Dong Kyun; Cho, Byung Jin, 2014 Symposium on VLSI Technology, VLSI Symposium, 2014-06-11 |
Dirac voltage tunability by Hf1-xLaxO gate dielectric composition modulation for graphene field effect devices Oh, Joong Gun; Shin, Yunsang; Shin, Woo Cheol; Sul, Onejae; Cho, Byung Jin, APPLIED PHYSICS LETTERS, v.99, no.19, 2011-11 |
Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment Lee, Jae Jin; Shin, Yunsang; Choi, Juyun; Kim, Hyoungsub; Hyun, Sangjin; Choi, Siyoung; Cho, Byung Jin; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.439 - 441, 2012-11 |
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