Crystallized HfLaO embedded tetragonal ZrO2 for dynamic random access memory capacitor dielectrics

Abstract

Cubic-structured HfLaO embedded tetragonal ZrO2 is investigated for application to a dynamic random access memory capacitor dielectric. It is found that hole injection is the determining factor of the leakage current in the ZrO2-HfLaO stack and thus HfLaO should be kept away from the electrode interface due to its smaller valance band offset than that of ZrO2. The insertion of cubic-structured HfLaO into tetragonal ZrO2 with an optimized thickness combination can effectively reduce the equivalent oxide thickness without increasing the leakage current. (C) 2011 American Institute of Physics. [doi:10.1063/1.3583590]