Browse "School of Electrical Engineering(전기및전자공학부)" by Author Bae, Hagyoul
Showing results 1 to 43 of 43
| A Novel Technique for Curing Hot-CarrierInduced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET Lee, Geon-Beom; Kim, Choong-Ki; Park, Jun-Young; Bang, Tewook; Bae, Hagyoul; Kim, Seong-Yeon; Ryu, Seung-Wan; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1012 - 1014, 2017-08 |
| A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor Hur, Jae; Jang, Byung Chul; Park, Jihun; Moon, Dong-Il; Bae, Hagyoul; Park, Jun-Young; Kim, Gun-Hee; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.47, 2018-11 |
| A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2 FET Bae, Hagyoul; Kim, Choong-Ki; Jeon, Seung-Bae; Shin, Gwang Hyuk; Kim, Eung Taek; Song, Jeong-Gyu; Kim, Youngjun; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.231 - 233, 2016-02 |
| A Study of Hot-Carrier Injection Influenced by Doping Concentration in a Junctionless-mode Gate-All-Around Field Effect Transistor with 5-story Vertically Integrated Nanowires Kim, Seong-Yeon; Lee, Seung-Wook; Seo, Myungsoo; Kim, Do-Hyun; Kim, Choong-Ki; Bae, Hagyoul; Lee, Byung-Hyun; et al, International Conference on Electronics, Information, and Communication, IEEE, 2018-01-24 |
| Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps Kim, Choong-Ki; Yu, Chan Hak; Hur, Jae; Bae, Hagyoul; Jeon, Seung-Bae; Park, Hamin; Kim, Yong Min; et al, 2D MATERIALS, v.3, no.1, pp.015007, 2016-03 |
| An Optimum Strategy for the Low Voltage Operation of the Mechanical Switch Lee, Byung-Hyun; Kang, Min-Ho; Hur, Jae; Ahn, Dae-Chul; Lee, Dong-Il; Bae, Hagyoul; Choi, Yang-Kyu, IEEE NANO 2015, IEEE, 2015-07-29 |
| Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications Bae, Hagyoul; Kim, Daewon; Seo, Myungsoo; Jin, Ik Kyeong; Jeon, Seung-Bae; Lee, Hye Moon; Jung, Soo-Ho; et al, ADVANCED MATERIALS TECHNOLOGIES, v.4, no.8, 2019-08 |
Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique Bae, Hagyoul; Kim, Choong-Ki; Choi, Yang-Kyu, AIP ADVANCES, v.7, no.7, 2017-07 |
| Chemically-Etched Optical Fiber Tapers for Adiabatic Fundamental Mode Evolution Over O-and C-Bands Son, Gyeongho; Pradono, Rizki Arif; Choi, Jiwon; Jeong, Youngjae; Han, Dae Seok; Syahadi, Mohamad; Jung, Youngho; et al, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.40, no.14, pp.4832 - 4840, 2022-04 |
| Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET Lee, Seung-Wook; Bang, Tewook; Kim, Choong-Ki; Hwang, Kyu-Man; Jang, Byung Chul; Moon, Dong-Il; Bae, Hagyoul; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1008 - 1011, 2017-08 |
| Direct Observation of a Carbon Filament in Water-Resistant Organic Memory Lee, Byung-Hyun; Bae, Hagyoul; Seong, Hyejeong; Lee, Dong-Il; Park, Hongkeun; Choi, Young Joo; Im, Sung-Gap; et al, ACS NANO, v.9, no.7, pp.7306 - 7313, 2015-07 |
| Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs) Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; et al, ACS APPLIED MATERIALS & INTERFACES, v.8, no.36, pp.23820 - 23826, 2016-09 |
| Energy-Efficient All Fiber-based Local Body Heat Mapping Circuitry Combining Thermistor and Memristor for Wearable Healthcare Device Bae, Hagyoul; Kim,Weon-Guk; Park, Hongkeun; Jeon, Seung-Bae; Jung, Soo-Ho; Lee, Hye Moon; Kim, Myung-Su; et al, 63rd IEEE Annual International Electron Devices Meeting (IEDM), pp.18.4.1 - 18.4.4, IEEE, 2017-12-04 |
| First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications Seo, Myungsoo; Kang, Min Ho; Jeon, Seung-Bae; Bae, Hagyoul; Hur, Jae; Jang, Byung Chul; Yun, Seokjung; et al, IEEE ELECTRON DEVICE LETTERS, v.39, no.9, pp.1445 - 1448, 2018-09 |
| Foldable and Disposable Memory on Paper Lee, Byung-Hyun; Lee, Dong-Il; Bae, Hagyoul; Seong, Hyejeong; Jeon, Seung-Bae; Seol, Myeong-Lok; Han, Jin-Woo; et al, SCIENTIFIC REPORTS, v.6, 2016-12 |
| Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics Bae, Hagyoul; Jang, Byung Chul; Park, Hongkeun; Jung, Soo-Ho; Lee, Hye Moon; Park, Jun-Young; Jeon, Seung-Bae; et al, NANO LETTERS, v.10, no.10, pp.6443 - 6452, 2017-10 |
| Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure Bae, Hagyoul; Lee, Geon Beom; Hur, Jae; Park, Jun Young; Kim, Da Jin; Kim, Myung Su; Choi, Yang-Kyu, MICROMACHINES, v.12, no.8, 2021-07 |
| Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Beom; Bang, Tewook; Son, Yoon-Ik; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.2, pp.419 - 423, 2018-02 |
| Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation Kim, Choong-Ki; Jeong, Eun Gyo; Kim, Eungtaek; Song, Jeong-Gyu; Kim, Youngjun; Woo, Whang Je; Lee, Myung Keun; et al, NANOTECHNOLOGY, v.28, no.5, 2017-02 |
| Improved Split C-V Technique for Accurate Extraction of Mobility by Considering Effective Inversion Charges in p-Channel Si0.8Ge0.2 MOSFET Bang, Te-Wook; Bae, Hagyoul; Kim, Choong-Ki; Hur, Jae; Park, Jun-Young; Ahn, Dae-Chul; Kim, Gun-Hee; et al, 한국 반도체 학술 대회, 한국 반도체 학술 대회, 2016-02-23 |
| Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET Bae, Hagyoul; Bang, Tewook; Kim, Choong-Ki; Hur, Jae; Kim, Seyeob; Jeon, Chang-Hoon; Park, Jun-Young; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250, 2017-05 |
| Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate-All-Around Junctionless Nanowire FET Jeong, Ui-Sik; Kim, Choong-Ki; Bae, Hagyoul; Moon, Dong-Il; Bang, Tewook; Choi, Ji-Min; Hur, Jae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp.2210 - 2213, 2016-05 |
| Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11 |
| Joule Heating to Enhance the Performance of a Gate-All-Around Silicon Nanowire Transistor Jeon, Chang-Hoon; Park, Jun-Young; Seol, Myeong-Lok; Moon, Dong-Il; Hur, Jae; Bae, Hagyoul; Jeon, Seung-Bae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.6, pp.2288 - 2292, 2016-06 |
| Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs Park, Jun-Young; Moon, Dong-Il; Bae, Hagyoul; Roh, Young Tak; Seol, Myeong-Lok; Lee, Byung-Hyun; Jeon, Chang-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.7, pp.843 - 846, 2016-07 |
| Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor Park, Jun-Young; Lee, Byung-Hyun; Lee, Geon-Beom; Bae, Hagyoul; Choi, Yang-Kyu, ACS APPLIED MATERIALS & INTERFACES, v.10, no.5, pp.4838 - 4843, 2018-02 |
| Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; et al, SCIENTIFIC REPORTS, v.6, 2016-05 |
| Memristive functional device and circuit on fabric for fibertronics = 웨어러블 전자소자 구현을 위한 섬유형 멤리스터 소자 및 회로link Bae, Hagyoul; Choi, Yang Kyu; et al, 한국과학기술원, 2018 |
| Nano-electromechanical Switch Based on a Physical Unclonable Function for Highly Robust and Stable Performance in Harsh Environments Hwang, Kyu-Man; Park, Jun-Young; Bae, Hagyoul; Lee, Seung-Wook; Kim, Choong-Ki; Seo, Myungsoo; Im, Hwon; et al, ACS NANO, v.11, no.12, pp.12547 - 12552, 2017-12 |
| Nanoscale FET-Based Transduction toward Sensitive Extended-Gate Biosensors Kwon, Jae; Lee, Byung-Hyun; Kim, Seong-Yeon; Park, Jun-Young; Bae, Hagyoul; Choi, Yang-Kyu; Ahn, Jae-Hyuk, ACS SENSORS, v.4, no.6, pp.1724 - 1729, 2019-06 |
| Nanowire Width-Dependent Low-Frequency Noise Characteristics in SiNW-based GAA JL Flash Memory with Extremely Small Dimension Bang, Te-Wook; Jeong, Ui-Sik; Kim, Choong-Ki; Bae, Hagyoul; Kim, Gun-Hee; Kim, Da-Jin; Choi, Yang-Kyu, 한국 반도체 학술 대회, 한국 반도체 학술 대회, 2016-02-24 |
| On-Chip Curing by Microwave for Long Term Usage of Electronic Devices in Harsh Environments Park, Jun-Young; Kim, Weon-Guk; Bae, Hagyoul; Jin, Ik Kyeong; Kim, Da-Jin; Im, Hwon; Tcho, Il-Woong; et al, SCIENTIFIC REPORTS, v.8, 2018-10 |
| Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application Bae, Hagyoul; Lee, Byung-Hyun; Lee, Dongil; Seol, Myeong-Lok; Kim, Daewon; Han, Jin-Woo; Kim, Choong-Ki; et al, SCIENTIFIC REPORTS, v.6, 2016-12 |
| Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC I-V Characterization Kim, Dohyun; Lim, Sung Kwan; Bae, Hagyoul; Kim, Choong-Ki; Lee, Seung-Wook; Seo, Myungsoo; Kim, Seong-Yeon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.4, pp.1640 - 1644, 2018-04 |
| Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.10, 2018-03 |
| Reply to Comments by Ortiz-Conde et al. Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Bum; Bang, Tewook; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.9, pp.4022 - 4024, 2018-09 |
| Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03 |
| Self-powered data erasing of nanoscale flash memory by triboelectricity Jin, Ik Kyeong; Park, Jun-Young; Lee, Byung-Hyun; Jeon, Seung-Bae; Tcho, Il-Woong; Park, Sang-Jae; Kim, Weon-Guk; et al, NANO ENERGY, v.52, pp.63 - 70, 2018-10 |
| Self-sustainable wind speed sensor system with omni-directional wind basedtriboelectric generator Park, Sang-Jae; Lee, Sang Han; Seol, Myeong-Lok; Jeon, Seung-Bae; Bae, Hagyoul; Kim, Daewon; Cho, Gyu-Hyeong; et al, NANO ENERGY, v.55, pp.115 - 122, 2019-01 |
| Separate Extraction of Source and Drain Resistances in Vertically Integrated Junctionless Nanowire Field Effect Transistors 서명수; Lee, Byung-Hyun; Bae, Hagyoul; 김건희; Choi, Yang-Kyu, 한국반도체학술대회, 한국반도체학술대회, 2017-02-14 |
| Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution Park, Jun-Young; Bae, Hagyoul; Moon, Dong-Il; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394, 2016-11 |
| Vertically Integrated zRAM (VI-zRAM): Toward Extremely Scaled Memory Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Bang, Te-Wook; Bae, Hagyoul; Park, Jun-Young; et al, ECS PRIME, ECS PRIME, 2016-10-05 |
| 트랜지스터 손상 치료 방법 및 이를 이용한 디스플레이 장치 최양규; Kim, Choong-Ki; Bae, Hagyoul; Park, Jun-Young, 2018-10-01 |
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