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Showing results 1 to 7 of 7

1
A 46-nF/10-M omega Range 114-aF/0.37-omega Resolution Parasitic- and Temperature-Insensitive Reconfigurable RC-to-Digital Converter in 0.18-mu m CMOS

George, Arup K.; Shim, Wooyoon; Kung, Jaeha; Kim, Ji-Hoon; Je, Minkyu; Lee, Junghyup, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.69, no.3, pp.1171 - 1184, 2022-03

2
A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect

Lee, Jaelin; Kim, Suna; Hong, Jong-Phil; Lee, Sang-Gug, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.4, pp.381 - 386, 2013-08

3
(A) new resistance model for a schottky barrier diode in CMOS including n-well thickness effect = CMOS 쇼트키 배리어 다이오드를 위한 n-well 두께 효과를 포함한 저항 모델link

Lee, Jaelin; 이재린; et al, 한국과학기술원, 2013

4
(A) study on physical behaviors of the substrate resistance for CMOS RF modeling = CMOS RF 모델링을 위한 기판저항의 물리적 특성에 관한 연구link

Kwon, Myeong-Ju; 권명주; et al, 한국과학기술원, 2001

5
(A) study on substrate resistance of RF MOSFETs = RF MOSFET의 기판 저항에 관한 연구link

Han, Jeong-Hu; 한정후; Shin, Hyung-Cheol; Lee, Kwy-Ro; et al, 한국과학기술원, 2002

6
Embedded microstrip interconnection lines for gigahertz digital circuits

Ryu, W; Baik, SH; Kim, H; Kim, J; Sung, MH; Kim, Joungho, IEEE TRANSACTIONS ON ADVANCED PACKAGING, v.23, no.3, pp.495 - 503, 2000-08

7
Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs

Choi, YS; Yoon, Jun-Bo, IEEE ELECTRON DEVICE LETTERS, v.25, no.2, pp.76 - 79, 2004-02

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