A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect

Abstract

A new resistance model for a Schottky Barrier Diode (SBD) in CMOS technology is proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar SBD which is firstly introduced in this paper. The model is verified using the simulation methodology ATLAS. For verification of the analyzed model and the ATLAS simulation results, SBD prototypes are fabricated using a 0.13 mu m CMOS process. It is demonstrated that the model and simulation results are consistent with measurement results of fabricated SBD