A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect

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dc.contributor.authorLee, Jaelinko
dc.contributor.authorKim, Sunako
dc.contributor.authorHong, Jong-Philko
dc.contributor.authorLee, Sang-Gugko
dc.date.accessioned2014-08-26T07:36:38Z-
dc.date.available2014-08-26T07:36:38Z-
dc.date.created2013-10-03-
dc.date.created2013-10-03-
dc.date.issued2013-08-
dc.identifier.citationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.4, pp.381 - 386-
dc.identifier.issn1598-1657-
dc.identifier.urihttp://hdl.handle.net/10203/187055-
dc.description.abstractA new resistance model for a Schottky Barrier Diode (SBD) in CMOS technology is proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar SBD which is firstly introduced in this paper. The model is verified using the simulation methodology ATLAS. For verification of the analyzed model and the ATLAS simulation results, SBD prototypes are fabricated using a 0.13 mu m CMOS process. It is demonstrated that the model and simulation results are consistent with measurement results of fabricated SBD-
dc.languageEnglish-
dc.publisherIEEK PUBLICATION CENTER-
dc.titleA New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect-
dc.typeArticle-
dc.identifier.wosid000327471200012-
dc.identifier.scopusid2-s2.0-84881258356-
dc.type.rimsART-
dc.citation.volume13-
dc.citation.issue4-
dc.citation.beginningpage381-
dc.citation.endingpage386-
dc.citation.publicationnameJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.identifier.doi10.5573/JSTS.2013.13.4.381-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Sang-Gug-
dc.contributor.nonIdAuthorLee, Jaelin-
dc.contributor.nonIdAuthorKim, Suna-
dc.contributor.nonIdAuthorHong, Jong-Phil-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorcapacitance-
dc.subject.keywordAuthorcut-off frequency-
dc.subject.keywordAuthorn-well thickness-
dc.subject.keywordAuthorresistance-
dc.subject.keywordAuthorSchottky barrier diodes-
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