Browse "School of Electrical Engineering(전기및전자공학부)" by Author Hur, Ji-Hyun
Showing results 1 to 12 of 12
| A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides Hur, Ji-Hyun; Lee, Dongsoo; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.20, 2015-11 |
| A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors Hur, Ji-Hyun; Park, Junghak; Jeon, Sanghun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.6, 2017-02 |
| Dislocation effects in FinFETs for different III-V compound semiconductors Hur, Ji-Hyun; Jeon, Sanghun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.15, 2016-04 |
| Dislocation scatterings in p-type Si1-xGex under weak electric field Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.26, no.49, 2015-12 |
| Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.32, 2016-08 |
| Fast transient charging behavior of HfInZnO thin-film transistor Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08 |
| III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation Hur, Ji-Hyun; Jeon, Sanghun, SCIENTIFIC REPORTS, v.6, 2016-02 |
| Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun, PHYSICAL REVIEW APPLIED, v.7, no.4, 2017-04 |
| Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; et al, ACS APPLIED MATERIALS & INTERFACES, v.3, no.1, pp.1 - 6, 2011-01 |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 |
| Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04 |
| Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET Hur, Ji-Hyun; Jeon, Sanghun, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634, 2016-10 |
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