Browse "School of Electrical Engineering(전기및전자공학부)" by Author He, YD
Showing results 1 to 8 of 8
| A study of quasi-breakdown mechanism in ultra thin gate oxide under various types of stress Cho, Byung Jin; Guan, H; Xu, Z; Li, MF; He, YD, Materials Research Society (MRS) 1999 Fall Meeting Symp., pp.0 - 0, 1999-11-29 |
| A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique Cho, Byung Jin; Guan, H; Li, MF; He, YD; Xu, Z; Dong, Z, the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits, pp.81 - 81, 1999-07-05 |
| A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs Guan, H; Li, MF; He, YD; Cho, Byung Jin; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08 |
| Conduction mechanism under quasibreakdown of ultrathin gate oxide He, YD; Guan, H; Li, MF; Cho, Byung Jin; Dong, Z, APPLIED PHYSICS LETTERS, v.75, no.16, pp.2432 - 2434, 1999-10 |
| Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Guan, H; Cho, Byung Jin; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05 |
| Investigation of quasi-breakdown mechanism in ultrathin gate oxides Cho, Byung Jin; He, YD; Guan, H; Li, MF; Dong, Z, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc., pp.0 - 0, 1999-11-29 |
| Role of hole fluence in gate oxide breakdown Li, MF; He, YD; Ma, SG; Cho, Byung Jin; Lo, KF; Xu, MZ, IEEE ELECTRON DEVICE LETTERS, v.20, no.11, pp.586 - 588, 1999-11 |
| Roles of primary hothole and FN electron fluences in gate oxide breakdown Cho, Byung Jin; Li, MF; He, YD; Ma, SG; Lo, KF; Xu, MZ, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc, pp.0 - 0, 1999-11-29 |
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