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Browse "School of Electrical Engineering(전기및전자공학부)" by Author Chin, A

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Showing results 1 to 22 of 22

1	A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics Cho, Byung Jin; Ding, SJ; Hu, H; Zhu, C; Kim, SJ; Li, MF; Chin, A; et al, Conference on Solid State and Integrated Circuit Technology (ICSICT), pp.0 - 0, 2004-10-18
2	A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02
3	Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03
4	Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05
5	Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs Cho, Byung Jin; Kim, SJ; Li, MF; Ding, SJ; Yu, MB; Zhu, C; Chin, A; et al, Symposium on VLSI Technology, pp.218 - 219, 2004-06-17
6	Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jin; Chan, DSH; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10
7	Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs Cho, Byung Jin; Huang, CH; Yu, DS; Chin, A; Chen, WJ; Zhu, C; Li, MF, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08
8	Germanium MOS capacitors with ultra thin HfO2 gate dielectric Cho, Byung Jin; Zhang, QC; Zu, C; Wu, N; Chin, A; Li, MF; Bera, LK, International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11
9	HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Kwong, DL, Symposium on VLSI Technology, pp.77 - 77, 2003-06-10
10	High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application Cho, Byung Jin; Kim, SJ; Yu, MB; Li, MF; Xiong, YZ; Zhu, C; Chin, A, Symposium on VLSI Technology, pp.56 - 57, 2005-06-14
11	High performance RF MOSFETs and passive devices on Si Cho, Byung Jin; Chin, A; Lai, CH; Lai, ZM; Lee, CF; Zhu, C; Li, MF; et al, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15
12	High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12
13	Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric Kim, SJ; Cho, Byung Jin; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08
14	Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers Kim, SJ; Cho, Byung Jin; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09
15	MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02
16	MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21
17	New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz Cho, Byung Jin; Chin, A; Mei, P; Zhu, C; Li, MF; Lee, S; Yoo, WJ, Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering, pp.0 - 0, 2003-11-13
18	Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Yu, MB; Xiong, YZ, 3rd International Conference on Materials for Advanced Technologies, pp.10 - 10, 2005-07-03
19	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06
20	Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, Byung Jin; Li, MF; Kwong, DL, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433, 2003-10
21	Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics Cho, Byung Jin; Huang, CH; Yang, MY; Chin, A; Chen, WJ; Zhu, CX; Li, MF, Symposium on VLSI Technology, pp.119 - 119, 2003-06-11
22	Voltage and temperature dependence of capacitance of high-K hfO2 MIM capacitors: A unified understanding and prediction Cho, Byung Jin; Zhu, C; Hu, H; Yang, XF; Kim, SJ; Chin, A, International Electron Device Meeting (IEDM), pp.0 - 0, IEEE International Electron Devices, 2003-12-08

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