Browse "School of Electrical Engineering(전기및전자공학부)" by Author Chan, DSH
Showing results 1 to 23 of 23
| A novel Hafnium Carbide Metal Gate Electrode for NMOS Device Application Cho, Byung Jin; Hwang, WS; Shen, C; Wang, XP; Chan, DSH, 2007 Symposium on VLSI Technology, pp.156 - 157, 2007-06-12 |
| A systematic study of high-K interpoly dielectric structures for floating gate flash memory devices Cho, Byung Jin; Zhang, L; He, W; Chan, DSH, IEEE 2nd International conference on memory technology and design, pp.223 - 226, 2007-03-07 |
| Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11 |
| Analysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separation Cho, Byung Jin; Loh, WY; Joo, MS; Li, MF; Chan, DSH; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08 |
| Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure Cho, Byung Jin; Yue, JMP; Chim, WK; Qin, WH; Chan, DSH; Kim, YB; Jang, SA, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.94 - 94, 1999-07-05 |
| Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation Loh, WY; Cho, Byung Jin; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12 |
| Damage free etching of RuO2 in O2/He plasma Cho, Byung Jin; Hwang, WS; Bliznetsov, VN; Chan, DSH; Yoo, WJ, 28th International Symposium on Dry Process, pp.0 - 0, 2006-11-29 |
| Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05 |
| Effects of Low Energy Nitrogen Plasma on the Removal of HfSiON Cho, Byung Jin; Hwang, WS; Yoo, WJ; Chan, DSH, AVS 53rd International Symposium, pp.0 - 0, 2006-11-12 |
| Effects of SiO2/Si3N4 hard masks on etching properties of metal gates Hwang, WS; Cho, Byung Jin; Chan, DSH; Bliznetsov, V; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2689 - 2694, 2006-11 |
| Enhancement of Dielectric Constant of HfO2 by Lanthanum Incorporation and Crystallization 조병진; He, W; Chan, DSH, 16th Korean Conference on Semiconductors, 2009-02-20 |
| Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jin; Chan, DSH; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10 |
| Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10 |
| High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12 |
| Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure Yue, JMP; Chim, WK; Cho, Byung Jin; Chan, DSH; Qin, WH; Kim, YB; Jang, SA; et al, IEEE ELECTRON DEVICE LETTERS, v.21, no.3, pp.130 - 132, 2000-03 |
| Localized oxide degradation in ultrathin gate dielectric and its statistical analysis Loh, WY; Cho, Byung Jin; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04 |
| Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF Hwang, WS; Cho, Byung Jin; Chan, DSH; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.4, pp.1056 - 1061, 2007-07 |
| Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process Cho, Byung Jin; Hwang, WS; Chan, DSH, IEEE 4th International Symposium on Advanced Gate Stack Technology, pp.0 - 0, 2007-09-10 |
| Metal carbides for band-edge work function metal gate CMOS devices Hwang, WS; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2469 - 2474, 2008-09 |
| Multi-layer high-kappa interpoly dielectric for floating gate flash memory devices Zhang, L; He, W; Chan, DSH; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.52, pp.564 - 570, 2008-04 |
| Progressive breakdown statistics in ultra-thin silicon dioxides Cho, Byung Jin; Loh, WY; Li, MF; Chan, DSH; Ang, CH; Zhen, ZJ; Kwong, DL, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.157 - 157, 2003-07-08 |
| RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06 |
| Study on nonvolatile byproducts generated during etching of advanced gate stacks Cho, Byung Jin; Hwang, WS; Chan, DSH; Yoo, WJ, 28th International Symposium on Dry Process, pp.0 - 0, 2006-11-29 |
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