DSpace at KOASAS: Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structureChannel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure

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Cho, Byung Jin researcher / Yue, JMP / Chim, WK / Qin, WH / Chan, DSH / Kim, YB / Jang, SA

Issue Date: 1999-07-05

Language: ENG

Citation: Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.94 - 94

URI: http://hdl.handle.net/10203/131546

Appears in Collection: EE-Conference Papers(학술회의논문)

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Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structureChannel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure

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