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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structureChannel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorYue, JMP-
dc.contributor.authorChim, WK-
dc.contributor.authorQin, WH-
dc.contributor.authorChan, DSH-
dc.contributor.authorKim, YB-
dc.contributor.authorJang, SA-
dc.date.accessioned2013-03-16T13:04:02Z-
dc.date.available2013-03-16T13:04:02Z-
dc.date.created2012-02-06-
dc.date.issued1999-07-05-
dc.identifier.citationProc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, v., no., pp.94 - 94-
dc.identifier.urihttp://hdl.handle.net/10203/131546-
dc.languageENG-
dc.titleChannel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure-
dc.title.alternativeChannel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage94-
dc.citation.endingpage94-
dc.citation.publicationnameProc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorYue, JMP-
dc.contributor.nonIdAuthorChim, WK-
dc.contributor.nonIdAuthorQin, WH-
dc.contributor.nonIdAuthorChan, DSH-
dc.contributor.nonIdAuthorKim, YB-
dc.contributor.nonIdAuthorJang, SA-
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EE-Conference Papers(학술회의논문)
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