Showing results 15 to 19 of 19
Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Im, Mae-Soon; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783, 2008-07 |
Refinement of Unified Random Access Memory Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04 |
Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes Moon, Dong-Il; Choi, Sung-Jin; Kim, Chung-Jin; Kim, Jee-Yeon; Lee, Jin-Seong; Oh, Jae-Sub; Lee, Gi-Sung; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.452 - 454, 2011-04 |
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
Vertically Integrated Unidirectional Biristor Moon, Dong-Il; Choi, Sung-Jin; Kim, Sung-Ho; Oh, Jae-Sub; Kim, Young-Su; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.11, pp.1483 - 1485, 2011-11 |
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