Showing results 3 to 8 of 8
Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices Choi, Yang-Kyu; Ha, Daewon; King, Tsu-Jae; Bokor, Jeffrey, International Conference on Solid State Devices and Materials, pp.140 - 141, 2002-09 |
Reliability Study of CMOS FinFETs Choi, Yang-Kyu; Ha, Daewon; Snow, Eric; Bokor, Jeffrey; King, Tsu-Jae, IEEE, pp.177 - 180, IEEE, 2003-12 |
Threshold Voltage Shift by Quantum Confinement in Ultra-thin Body Device Choi, Yang-Kyu; Ha, Daewon; King, Tsu-Jae; Hu, Chenming, IEEE, pp.85 - 86, 2001-06 |
Tunable Work Function Molybdenum Gate Technology for FDSOI-CMOS Choi, Yang-Kyu; Ranade, Pushkar; Ha, Daewon; Agrwal, Aditya; Ameen, Michae; King, Tsu-Jae, IEEE, pp.363 - 366, IEEE, 2002-12 |
Ultra-Thin Body PMOSFETs with Selectively Deposited Ge Source/Drain Choi, Yang-Kyu; Ha, Daewon; King, Tsu-Jae; Hu, Chenming, 2001 IEEE Symposium on VLSI Technology Digest of Technical Papers, pp.19 - 20, IEEE, 2001-06 |
Ultra-Thin Body Silicon- on-Insulator (UTB SOI) MOSFET with Metal Gate Work-Function Engineering for Sub-70nm Technology Node Choi, Yang-Kyu; Ha, Daewon; Ranade, Pushkar; Lee, Jeong-Soo; King, Tsu-Jae; Hu, Chenming, International Conference on Solid State Devices and Materials, pp.782 - 783, 2002-09 |
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