Showing results 6 to 8 of 8
Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer Tan, YN; Chim, WK; Cho, Byung Jin; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07 |
Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing Kim, Taeho; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1771 - 1773, 2018-05 |
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08 |
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