Showing results 2 to 4 of 4
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications Joh, Hongrae; Nam, Sooji; Jung, Minhyun; Shin, Hunbeom; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.15, no.44, pp.51339 - 51349, 2023-10 |
High performance back channel etch metal oxide thin-film transistor with double active layers Yang, Jong-Heon; Choi, Ji Hun; Pi, Jae-Eun; Kim, Hee-Ok; Park, Eun-Suk; Kwon, Oh-Sang; Nam, Sooji; et al, 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016, pp.1151 - 1154, Blackwell Publishing Ltd, 2016-05 |
Ultrafast (50 ns) ID-VGAnalysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator Jung, Taeseung; Nam, Sooji; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3009 - 3014, 2024-05 |
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