High performance back channel etch metal oxide thin-film transistor with double active layers

Abstract

We fabricated high performance back channel etch (BCE) IZO/AIZTO double-layer channel oxide thin-film transistors (TFTs) and analyzed their electrical characteristics and photo-stability of the devices. The field-effect mobility of 53.2 cm2/Vs was obtained, and we expect IZO/AIZTO double-layer BCE TFT can be used as a backplane devices for next generation high performance display applications.