Browse "School of Electrical Engineering(전기및전자공학부)" by Author Jin, Hyeok Jun
Showing results 5 to 11 of 11
| High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong-Sik; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01 |
| Plasmonic Nanoparticles on Graphene Absorber for Broadband High Responsivity 2D/3D Photodiode Park, Cheolmin; Han, Seung Hun; Jin, Hyeok Jun; Hong, Woonggi; Choi, Sung-Yool, ACS NANO, v.17, no.10, pp.9262 - 9271, 2023-05 |
| Suppression of Surface Optical Phonon Scattering by AlN Interfacial Layers for Mobility Enhancement in MoS2 FETs Hong, Woonggi; Shim,Gi Woong; Jin, Hyeok Jun; Park, Hamin; Kang, Mingu; Yang, Sang Yoon; Choi, Sung-Yool, NANOSCALE, v.16, pp.16602 - 16610, 2024-09 |
| Ultra-broadband MoS2 photodetector based on gap-mode plasmon of gold nanorod Jin, Hyeok Jun; Lee, Khang June; Park, Chelomin; Park, Seo Hak; Choi, Sung-Yool, 11th International Workshop on 2D Materials, SOGANG UNIVERSITY, 2023-02-17 |
| Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction Shin, Gwang Hyuk; Park, Cheolmin; Lee, Khang June; Jin, Hyeok Jun; Choi, Sung-Yool, NANO LETTERS, v.20, no.8, pp.5741 - 5748, 2020-08 |
| Ultrasensitive WSe2/alpha-In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect Jin, Hyeok Jun; Park, Cheolmin; Lee, Khang June; Shin, Gwang Hyuk; Choi, Sung-Yool, ADVANCED MATERIALS TECHNOLOGIES, v.6, no.11, pp.2100494, 2021-11 |
| Ultrasensitive WSe2/ɑ-In2Se3 NIR photodetector based on ferroelectric gating effect Jin, Hyeok Jun; Park, Cheolmin; Lee, Khang June; Shin, Gwang Hyuk; Choi, Sung-Yool, RPGR 2021: Recent Progress in Graphene and Two-dimensional Materials Research Conference, Recent Progress in Graphene and Two-dimensional Materials Research, 2021-10-11 |
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