Showing results 2 to 10 of 10
CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS Lee, Kwyro; SHUR, MS; DRUMMOND, TJ; MORKOC, H, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.30, no.3, pp.207 - 212, 1983 |
ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS Lee, Kwyro; SHUR, M; DRUMMOND, TJ; MORKOC, H, JOURNAL OF APPLIED PHYSICS, v.54, no.4, pp.2093 - 2096, 1983 |
ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES DRUMMOND, TJ; SU, SL; LYONS, WG; FISCHER, R; KOPP, W; MORKOC, H; Lee, Kwyro; et al, ELECTRONICS LETTERS, v.18, no.24, pp.1057 - 1058, 1982 |
INSTABILITIES IN MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFETS) AT 77-K FISCHER, R; DRUMMOND, TJ; KOPP, W; MORKOC, H; Lee, Kwyro; SHUR, MS, ELECTRONICS LETTERS, v.19, no.19, pp.789 - 791, 1983 |
LOW FIELD MOBILITY OF 2-D ELECTRON-GAS IN MODULATION DOPED ALXGA1-XAS/GAAS LAYERS Lee, Kwyro; SHUR, MS; DRUMMOND, TJ; MORKOC, H, JOURNAL OF APPLIED PHYSICS, v.54, no.11, pp.6432 - 6438, 1983 |
MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR DRUMMOND, TJ; MORKOC, H; Lee, Kwyro; SHUR, M, ELECTRON DEVICE LETTERS, v.3, no.11, pp.338 - 341, 1982 |
PARALLEL CONDUCTION CORRECTION TO MEASURED ROOM-TEMPERATURE MOBILITY IN (AL, GA)AS-GAAS MODULATION DOPED LAYERS Lee, Kwyro; SHUR, MS; KLEM, J; DRUMMOND, TJ; MORKOC, H, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.23, no.4, pp.230 - 231, 1984 |
PARASITIC MESFET IN (AL, GA) AS/GAAS MODULATION DOPED FETS AND MODFET CHARACTERIZATION Lee, Kwyro; SHUR, MS; DRUMMOND, TJ; MORKOC, H, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.1, pp.29 - 35, 1984 |
PERSISTENT PHOTOCONDUCTIVITY IN (AL,GA)AS/GAAS MODULATION DOPED STRUCTURES - DEPENDENCE ON STRUCTURE AND GROWTH TEMPERATURE KLEM, J; MASSELINK, WT; ARNOLD, D; FISCHER, R; DRUMMOND, TJ; MORKOC, H; Lee, Kwyro; et al, JOURNAL OF APPLIED PHYSICS, v.54, no.9, pp.5214 - 5217, 1983 |
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