Thermoelectric properties of 50-nm-wide n- and p- type silicon nanowires

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For the evaluation of thermoelectric properties in silicon nanowires (SiNWs), thermoelectric test structures are manufactured, including 50-nm-wide n- and p-type SiNWs, micro-heater and temperature sensors using a conventional lithography method on 8 in. silicon wafer. For the optimization of thermoelectric properties in SiNWs, we have evaluated Seebeck coefficients and power factors of n- and p-type SiNWs by varying the nanowire length 10, 40 mu m and temperature (from 310 to 450 K). The results show that the maximum Seebeck coefficients and power factors are and for long p-type and long n-type SiNWs, respectively. The contribution of phonon-drag effect to thermoelectric power is discussed in the highly doped SiNWs.
Publisher
SPRINGER
Issue Date
2015-07
Language
English
Article Type
Article
Keywords

THERMAL-CONDUCTIVITY; TRANSPORT; FIGURE; MERIT; POWER

Citation

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.120, no.1, pp.265 - 269

ISSN
0947-8396
DOI
10.1007/s00339-015-9184-2
URI
http://hdl.handle.net/10203/199992
Appears in Collection
RIMS Journal Papers
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