Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties

Abstract

In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I-V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures.