DC Field | Value | Language |
---|---|---|
dc.contributor.author | Na, Sekwon | ko |
dc.contributor.author | Kang, Jun-gu | ko |
dc.contributor.author | Choi, Juyun | ko |
dc.contributor.author | Lee, Nam-Suk | ko |
dc.contributor.author | Park, Chan Gyung | ko |
dc.contributor.author | Kim, Hyoungsub | ko |
dc.contributor.author | Lee, Seok-Hee | ko |
dc.contributor.author | Lee, Hoo-Jeong | ko |
dc.date.accessioned | 2015-06-29T04:44:13Z | - |
dc.date.available | 2015-06-29T04:44:13Z | - |
dc.date.created | 2015-06-23 | - |
dc.date.created | 2015-06-23 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.citation | ACTA MATERIALIA, v.92, pp.1 - 7 | - |
dc.identifier.issn | 1359-6454 | - |
dc.identifier.uri | http://hdl.handle.net/10203/199455 | - |
dc.description.abstract | In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I-V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | LOW SCHOTTKY-BARRIER | - |
dc.subject | FABRICATION | - |
dc.subject | SILICON | - |
dc.subject | GROWTH | - |
dc.subject | METALS | - |
dc.subject | MOSFET | - |
dc.subject | FILMS | - |
dc.title | Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties | - |
dc.type | Article | - |
dc.identifier.wosid | 000355054600001 | - |
dc.identifier.scopusid | 2-s2.0-84927168681 | - |
dc.type.rims | ART | - |
dc.citation.volume | 92 | - |
dc.citation.beginningpage | 1 | - |
dc.citation.endingpage | 7 | - |
dc.citation.publicationname | ACTA MATERIALIA | - |
dc.identifier.doi | 10.1016/j.actamat.2015.03.041 | - |
dc.contributor.localauthor | Lee, Seok-Hee | - |
dc.contributor.nonIdAuthor | Na, Sekwon | - |
dc.contributor.nonIdAuthor | Kang, Jun-gu | - |
dc.contributor.nonIdAuthor | Choi, Juyun | - |
dc.contributor.nonIdAuthor | Lee, Nam-Suk | - |
dc.contributor.nonIdAuthor | Park, Chan Gyung | - |
dc.contributor.nonIdAuthor | Kim, Hyoungsub | - |
dc.contributor.nonIdAuthor | Lee, Hoo-Jeong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Yb silicide | - |
dc.subject.keywordAuthor | Mo-alloyed ytterbium | - |
dc.subject.keywordAuthor | Epitaxial layer | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | Thermal stability | - |
dc.subject.keywordPlus | LOW SCHOTTKY-BARRIER | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | METALS | - |
dc.subject.keywordPlus | MOSFET | - |
dc.subject.keywordPlus | FILMS | - |
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