Highly uniform carbon nanotube nanomesh network transistors

Abstract

A new type of single-walled carbon nanotube (SWNT) thin-film transistor (TFT) structure with a nanomesh network channel has been fabricated from a preseparated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thinfilm display electronics.