DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Bennett, Patrick | ko |
dc.contributor.author | Lee, Dongil | ko |
dc.contributor.author | Bokor, Jeffrey | ko |
dc.date.accessioned | 2015-06-03T06:24:24Z | - |
dc.date.available | 2015-06-03T06:24:24Z | - |
dc.date.created | 2015-05-26 | - |
dc.date.created | 2015-05-26 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.citation | NANO RESEARCH, v.8, no.4, pp.1320 - 1326 | - |
dc.identifier.issn | 1998-0124 | - |
dc.identifier.uri | http://hdl.handle.net/10203/198721 | - |
dc.description.abstract | A new type of single-walled carbon nanotube (SWNT) thin-film transistor (TFT) structure with a nanomesh network channel has been fabricated from a preseparated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thinfilm display electronics. | - |
dc.language | English | - |
dc.publisher | TSINGHUA UNIV PRESS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ALIGNED ARRAYS | - |
dc.subject | INTEGRATED-CIRCUITS | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | LOGIC GATES | - |
dc.subject | ELECTRONICS | - |
dc.subject | DIELECTRICS | - |
dc.subject | DENSITY | - |
dc.subject | TRANSPARENT | - |
dc.title | Highly uniform carbon nanotube nanomesh network transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000353807500025 | - |
dc.identifier.scopusid | 2-s2.0-84939999690 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1320 | - |
dc.citation.endingpage | 1326 | - |
dc.citation.publicationname | NANO RESEARCH | - |
dc.identifier.doi | 10.1007/s12274-014-0623-8 | - |
dc.contributor.localauthor | Lee, Dongil | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.contributor.nonIdAuthor | Bennett, Patrick | - |
dc.contributor.nonIdAuthor | Bokor, Jeffrey | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | carbon nanotube | - |
dc.subject.keywordAuthor | network | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | nanomesh | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | highly uniform | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ALIGNED ARRAYS | - |
dc.subject.keywordPlus | INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | LOGIC GATES | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | TRANSPARENT | - |
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