The Effect of Postannealing on the Electrical Properties of (Pb,Sr)TiO3 Thin Films Prepared by Liquid Source Misted Chemical Deposition for Ultra Large-Scale Integration (ULSI) Dynamic Random Access Memory (DRAM) Capacitor

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The beneficial effect of post-annealing on the properties of lead–strontium–titanate (PST) thin films prepared by liquid source misted chemical deposition are reported. Their composition and depth profile were uniform. The dielectric constant and dielectric loss of the 100-nm-thick Pb0.32Sr0.68TiO3 film annealed at 650°C for 5 min in air and annealed further at 630°C for 30 min after top electrode deposition were 560 (equivalent oxide thickness=0.70 nm) and 0.0173, respectively. Especially, the leakage current density was greatly influenced by post-heat treatment in O2 and N2 ambient gas after the top Pt electrode was deposited on a PST thin film. The leakage current density of 1.85×10−8 A/cm2 at 1 V was obtained after the 130-nm-thick PST thin film was treated by inductively coupled plasma (ICP).
Publisher
ELSEVIER SCIENCE SA
Issue Date
2001-08
Language
English
Citation

THIN SOLID FILMS, v.394, no.1-2, pp.212 - 217

ISSN
0040-6090
DOI
10.1016/S0040-6090(01)01015-X
URI
http://hdl.handle.net/10203/198423
Appears in Collection
CBE-Journal Papers(저널논문)
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