Effect of sputtering condition and heat treatment in Co/Cu/Co/FeMn spin valve

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dc.contributor.authorKim, HJko
dc.contributor.authorBae, JSko
dc.contributor.authorLee, Taek Dongko
dc.contributor.authorLee, HyuckMoko
dc.date.accessioned2007-11-16T07:13:52Z-
dc.date.available2007-11-16T07:13:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-03-
dc.identifier.citationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.241, no.2-3, pp.173 - 178-
dc.identifier.issn0304-8853-
dc.identifier.urihttp://hdl.handle.net/10203/1971-
dc.description.abstractThe exchange field of Cu(50Angstrom)/FeMn(50Angstrom) /Co(50Angstrom) sputtered on Si substrate was studied in terms of surface roughness and phase formation of gamma-FeMn under a variety of Ar pressures and powers in sputtering. It was found that the exchange field is stronger when the surface is smoother and the FeMn layer forms better. The exchange bias field increased by more than three times after heat treatment. The effect of heat treament on magnetoresistance (MR) and resistance of the top spin valve. substrate/Co(30Angstrom)/Cu(30Angstrom)/Co(30Angstrom)/FeMn(150Angstrom), was studied. It was observed that the MR started to increase with annealing temperature and the effect was significant at 150degreesC. The heat treatment led to the disappearance of the intermixed layer between Co and Cu. and the concentration profile of Cu became flat and smooth at this temperature. (C) 2002 Elsevier Science B.V. All rights reserved.-
dc.description.sponsorshipThis research has been supported by the Ministry of Science and Technology through the Nanostructure Technology Project. An additional support from the Ministry of Education through the BK21 Project is also acknowledged.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMAGNETORESISTANCE-
dc.subjectMULTILAYERS-
dc.titleEffect of sputtering condition and heat treatment in Co/Cu/Co/FeMn spin valve-
dc.typeArticle-
dc.identifier.wosid000175909100003-
dc.identifier.scopusid2-s2.0-0036504901-
dc.type.rimsART-
dc.citation.volume241-
dc.citation.issue2-3-
dc.citation.beginningpage173-
dc.citation.endingpage178-
dc.citation.publicationnameJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Taek Dong-
dc.contributor.localauthorLee, HyuckMo-
dc.contributor.nonIdAuthorKim, HJ-
dc.contributor.nonIdAuthorBae, JS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorexchange bias field-
dc.subject.keywordAuthorthermal annealing-
dc.subject.keywordAuthorintermixed layer-
dc.subject.keywordAuthormagnetoresistance-
dc.subject.keywordAuthorAuger electron spectroscopy-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusMULTILAYERS-
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