Sulfur effects in dopant-segregated schottky barrier (DSSB) junctionDSSB 접합에서의 S 이온 주입 효과 검증

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In order to reduce the Schottky barrier height (SBH) in metal-semiconductor junction, sulfur (S) seg-regation technique that is advanced technique of dopant-segregation has been researched. However, there is no clear mechanism of the S segregation effects even though several theories have been proposed during the past 10 years. In this paper, arsenic (As) and S co-implanted dopant-segregated Schottky barrier (DSSB) de-vices were fabricated to verify the S effects experimentally. And the low-frequency (LF) noise analysis as well as the I-V characterization was employed. As a result, the doping effect and the S segregation effect were superposed in I-V characteristics, whereas the trapping effect by deep states, rather than doping effect, was verified as the mechanism of S effect by using LF noise analysis.
Advisors
Choi, Yang-Kyuresearcher최양규
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
2014
Identifier
569283/325007  / 020123604
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.2, [ iii, 44 p. ]

Keywords

Dopant-segregated Schottky barrier (DSSB) FET; 저주파 노이즈 분석; 황 이온 주입; 실리사이드; 금속-반도체 접합; Dopant-segregated Schottky barrier (DSSB) FET; metal-semiconductor (M-S) junction; silicidation; sulfur implantation; low-frequency noise analysis

URI
http://hdl.handle.net/10203/196811
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=569283&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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