DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sang-Il | ko |
dc.contributor.author | Kim, Dongjun | ko |
dc.contributor.author | Seo, Min-Su | ko |
dc.contributor.author | Park, Byong Guk | ko |
dc.contributor.author | Park, Seung-Young | ko |
dc.date.accessioned | 2015-04-08T02:27:16Z | - |
dc.date.available | 2015-04-08T02:27:16Z | - |
dc.date.created | 2015-03-03 | - |
dc.date.created | 2015-03-03 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.106, no.3 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/195457 | - |
dc.description.abstract | Ta-layer thickness (t(Ta)) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE011 resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t(Ta). For t(Ta) approximate to lambda(Ta) (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V-ISH between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle theta(SH) (from 10% to 40%). However, when tTa >> lambda(Ta), the V-ISH values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained theta(SH) within 4% deviation. The results will provide an outline for an accurate estimation of the theta(SH) for materials with small lambda value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.title | Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure | - |
dc.type | Article | - |
dc.identifier.wosid | 000348381000047 | - |
dc.identifier.scopusid | 2-s2.0-84923816409 | - |
dc.type.rims | ART | - |
dc.citation.volume | 106 | - |
dc.citation.issue | 3 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4906487 | - |
dc.contributor.localauthor | Park, Byong Guk | - |
dc.contributor.nonIdAuthor | Kim, Sang-Il | - |
dc.contributor.nonIdAuthor | Seo, Min-Su | - |
dc.contributor.nonIdAuthor | Park, Seung-Young | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
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