Fabrication of 10 nm-Scale Complex 3D Nanopatterns with Multiple Shapes and Components by Secondary Sputtering Phenomenon

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We introduce an advanced ultrahigh-resolution (similar to 15 nm) patterning technique that enables the fabrication of various 3D high aspect ratio multicomponents/shaped nanostructures. This methodology utilizes the repetitive secondary sputtering phenomenon under etching plasma conditions and prepattemed fabrication control. The secondary sputtering phenomenon repetitively generates an angular distribution of target particles during ion-bombardment. This method, advanced repetitive secondary sputtering lithography, provides many strategies to fabricate complex continuous patterns and multilayer/material patterns with 10 nm-scale resolution. To demonstrate the versatility of this method, we show induced vertical alignment of liquid crystals (LCs) on indium-tin-oxide (ITO) grid patterns without any alignment layers. The ITO grid pattern fabricated in this method is found to have not only an alignment capability but also electrode properties without electrical or optical damage.
Publisher
AMER CHEMICAL SOC
Issue Date
2014-02
Language
English
Article Type
Article
Keywords

LARGE-AREA; LITHOGRAPHY; ALIGNMENT; NANOSTRUCTURES; PATTERN; SURFACE; ARRAYS; SILICON; LAYER

Citation

ACS NANO, v.8, no.2, pp.1204 - 1212

ISSN
1936-0851
DOI
10.1021/nn4037688
URI
http://hdl.handle.net/10203/193023
Appears in Collection
CBE-Journal Papers(저널논문)
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