Structurally Nanocrystalline-Electrically Single Crystalline ZnO-Reduced Graphene Oxide Composites

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dc.contributor.authorNam, Woo Hyunko
dc.contributor.authorKim, Bo Baeko
dc.contributor.authorSeo, Seul Giko
dc.contributor.authorLim, Young Sooko
dc.contributor.authorKim, JYko
dc.contributor.authorSeo, Won-Seonko
dc.contributor.authorChoi, Won Kookko
dc.contributor.authorPark, Hyung-Hoko
dc.contributor.authorLee, JeongYongko
dc.date.accessioned2014-12-16T01:13:33Z-
dc.date.available2014-12-16T01:13:33Z-
dc.date.created2014-10-21-
dc.date.created2014-10-21-
dc.date.issued2014-09-
dc.identifier.citationNANO LETTERS, v.14, no.9, pp.5104 - 5109-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/192786-
dc.description.abstractZnO, a wide bandgap semiconductor, has attracted much attention due to its multifunctionality, such as transparent conducting oxide, light-emitting diode, photocatalyst, and so on. To improve its performances in the versatile applications, numerous hybrid strategies of ZnO with graphene have been attempted, and various synergistic effects have been achieved in the ZnOgraphene hybrid nanostructures. Here we report extraordinary charge transport behavior in Al-doped ZnO (AZO)-reduced graphene oxide (RGO) nanocomposites. Although the most challenging issue in semiconductor nanocomposites is their low mobilities, the AZO-RGO nanocomposites exhibit single crystal-like Hall mobility despite the large quantity of nanograin boundaries, which hinder the electron transport by the scattering with trapped charges. Because of the significantly weakened grain boundary barrier and the proper band alignment between the AZO and RGO, freely conducting electrons across the nanograin boundaries can be realized in the nanocomposites. This discovery of the structurally nanocrystalline-electrically single crystalline composite demonstrates a new route for enhancing the electrical properties in nanocomposites based on the hybrid strategy.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectLIGHT-EMITTING-DIODES-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectC-PLANE SAPPHIRE-
dc.subjectDOPED ZINC-OXIDE-
dc.subjectTHERMOELECTRIC PROPERTIES-
dc.subjectPHOTOCATALYTIC DEGRADATION-
dc.subjectOPTOELECTRONIC DEVICES-
dc.subjectELECTRON-MOBILITY-
dc.subjectQUANTUM DOTS-
dc.subjectTEMPERATURE-
dc.titleStructurally Nanocrystalline-Electrically Single Crystalline ZnO-Reduced Graphene Oxide Composites-
dc.typeArticle-
dc.identifier.wosid000341544500028-
dc.identifier.scopusid2-s2.0-84914140174-
dc.type.rimsART-
dc.citation.volume14-
dc.citation.issue9-
dc.citation.beginningpage5104-
dc.citation.endingpage5109-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/nl5018089-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, Bo Bae-
dc.contributor.nonIdAuthorSeo, Seul Gi-
dc.contributor.nonIdAuthorLim, Young Soo-
dc.contributor.nonIdAuthorKim, JY-
dc.contributor.nonIdAuthorSeo, Won-Seon-
dc.contributor.nonIdAuthorChoi, Won Kook-
dc.contributor.nonIdAuthorPark, Hyung-Ho-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorreduced graphene oxide-
dc.subject.keywordAuthornanocomposite-
dc.subject.keywordAuthorcharge transport-
dc.subject.keywordAuthormobility-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusC-PLANE SAPPHIRE-
dc.subject.keywordPlusDOPED ZINC-OXIDE-
dc.subject.keywordPlusTHERMOELECTRIC PROPERTIES-
dc.subject.keywordPlusPHOTOCATALYTIC DEGRADATION-
dc.subject.keywordPlusOPTOELECTRONIC DEVICES-
dc.subject.keywordPlusELECTRON-MOBILITY-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusTEMPERATURE-
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