DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Jinsuk | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.date.accessioned | 2014-12-16T01:12:43Z | - |
dc.date.available | 2014-12-16T01:12:43Z | - |
dc.date.created | 2014-10-21 | - |
dc.date.created | 2014-10-21 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.17, pp.15335 - 15343 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/192777 | - |
dc.description.abstract | We fabricated active single- and bilayer structure thin film transistors (TFTs) with aluminum or gallium doped (IZO:Al or IZO:Ga) and undoped indium zinc oxide (IZO) thin film layers using an aqueous solution process. The electrical performance and bias stability of these active single- and bilayer structure TFTs were investigated and compared to reveal the effects of Al/Gal doping and bilayer structure. The single-layer structure IZO TFT shows a high mobility of 19 cm(2)/V.s with a poor positive bias stability (PBS) of Delta V-T + 3.4 V. However, Al/Ga doped in IZO TFT reduced mobility to 8.59.9 cm(2)/V.s but improved PBS to Delta V-T + 1.61.7 V due to the reduction of oxygen vacancy. Thus, it is found the bilayer structure TFTs with a combination of bottom- and top-layer compositions modify both the mobility and bias stability of the TFTs to be optimized. The bilayer structure TFT with an IZO:X bottom layer possess high mobility and an IZO bottom layer improves the PBS. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | LOW-TEMPERATURE | - |
dc.subject | CARRIER TRANSPORT | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | LAYER | - |
dc.title | Improved Electrical Performance and Bias Stability of Solution-Processed Active Bilayer Structure of Indium Zinc Oxide based TFT | - |
dc.type | Article | - |
dc.identifier.wosid | 000341544200070 | - |
dc.identifier.scopusid | 2-s2.0-84907833162 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 17 | - |
dc.citation.beginningpage | 15335 | - |
dc.citation.endingpage | 15343 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/am5037934 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | metal oxide TFT | - |
dc.subject.keywordAuthor | indium zinc oxide | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | active bilayer structure | - |
dc.subject.keywordAuthor | field effect mobility | - |
dc.subject.keywordAuthor | bias stability | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | LAYER | - |
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