DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Myoungho | ko |
dc.contributor.author | Lee, Hyo Sung | ko |
dc.contributor.author | Han, Seok Kyu | ko |
dc.contributor.author | Eun-Jung-Shin | ko |
dc.contributor.author | Hong, Soon-Ku | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Park, Yun Chang | ko |
dc.contributor.author | Yang, Jun-Mo | ko |
dc.contributor.author | Yao, Takafumi | ko |
dc.date.accessioned | 2014-12-09T06:14:34Z | - |
dc.date.available | 2014-12-09T06:14:34Z | - |
dc.date.created | 2014-04-01 | - |
dc.date.created | 2014-04-01 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.citation | MICROSCOPY AND MICROANALYSIS, v.19, pp.145 - 148 | - |
dc.identifier.issn | 1431-9276 | - |
dc.identifier.uri | http://hdl.handle.net/10203/192560 | - |
dc.description.abstract | The growth of high-quality indium (In)-rich InXGa1-XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1-XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1-XN layers. Composition modulations were observed in the In-rich InXGa1-XN layers with various In compositions. The In composition modulation in the InXGa1-XN alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In0.67Ga0.33N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0 (1) over bar 14} planes of InGaN. | - |
dc.language | English | - |
dc.publisher | CAMBRIDGE UNIV PRESS | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | PHASE-SEPARATION | - |
dc.subject | FILMS | - |
dc.subject | INN | - |
dc.title | Microstructural Characterization of High Indium-Composition InXGa1-XN Epilayers Grown on c-Plane Sapphire Substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000332111100033 | - |
dc.identifier.scopusid | 2-s2.0-84881403311 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.beginningpage | 145 | - |
dc.citation.endingpage | 148 | - |
dc.citation.publicationname | MICROSCOPY AND MICROANALYSIS | - |
dc.identifier.doi | 10.1017/S143192761301252X | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Jeong, Myoungho | - |
dc.contributor.nonIdAuthor | Lee, Hyo Sung | - |
dc.contributor.nonIdAuthor | Han, Seok Kyu | - |
dc.contributor.nonIdAuthor | Eun-Jung-Shin | - |
dc.contributor.nonIdAuthor | Hong, Soon-Ku | - |
dc.contributor.nonIdAuthor | Park, Yun Chang | - |
dc.contributor.nonIdAuthor | Yang, Jun-Mo | - |
dc.contributor.nonIdAuthor | Yao, Takafumi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | nitride materials | - |
dc.subject.keywordAuthor | InGaN | - |
dc.subject.keywordAuthor | EDS | - |
dc.subject.keywordAuthor | TEM | - |
dc.subject.keywordAuthor | composition modulation | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | PHASE-SEPARATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | INN | - |
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