Showing results 1 to 4 of 4
Analysis of an a-Si:H P-I-N Diode for the flat panel detector : leakage current and radiation damage = 평판형 검출기용 비정질 실리콘 P-I-N 다이오드의 누설전류 및 방사선 영향 분석link Kim, Hee-Joon; 김희준; et al, 한국과학기술원, 2003 |
Characterization of a 14 in x 17 in flat panel detector based on ion shower doped a-Si : H P-I-N diodes Kim, HJ; Cho, Gyuseong, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.50, pp.1654 - 1658, 2003-10 |
Construction and characterization of an amorphous silicon flat-panel detector based on ion-shower doping process Kim, HJ; Kim, HK; Cho, Gyuseong; Choi, J, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.505, no.1-2, pp.155 - 158, 2003-06 |
On the development of digital radiography detectors : A review Kim, Ho Kyung; Cunningham, Ian Alexander; Yin, Zhye; Cho, Gyuseong, INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING, v.9, no.4, pp.86 - 100, 2008-10 |
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