Characterization of a 14 in x 17 in flat panel detector based on ion shower doped a-Si : H P-I-N diodes

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In recent years, it has become technically and economically feasible to use solid-state detector technology to display, store and transfer X-ray images. In this paper, we report the performance of a 33 cm x 41 cut amorphous silicon flat panel detector (FPD) based on an ion shower doped P-I-N photodiode/thin-film transistor (TFT) array. The p-layer of a diode is formed by an ion shower doping method instead of the conventional plasma-enhanced chemical vapor deposition method. Measurements of X-ray imaging performances are reported for general imaging metrics such as modulation transfer function, noise power spectrum and detective quantum efficiency. The presampling MTF was found to be 0.51 and 0.26 at 1 lp/mm and 2 lp/mm. The measured DQE at I lp/mm and 2 lp/mm was 0.35 and 0.17.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-10
Language
English
Article Type
Article
Keywords

RADIOGRAPHY; NOISE

Citation

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.50, pp.1654 - 1658

ISSN
0018-9499
URI
http://hdl.handle.net/10203/1732
Appears in Collection
NE-Journal Papers(저널논문)
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