Effect of vanadium content on remanent polarization in bismuth titanate thin films prepared by liquid source misted chemical deposition

Abstract

Bi4-x/3Ti3-xVxO12 (BTV) ferroelectric thin films were fabricated by liquid source misted chemical deposition. The substitution of vanadium for titanium site changed the crystalline orientation and surface morphology of the thin film, which in turn influenced the remanent polarization (P-r). 2P(r) of BTV thin film increased with increase of vanadium content and reached a maximum value (21.5 mu C/cm(2)) at x=0.03, as this corresponded with the largest degree of a-axis orientation. However, at 0.05 <= x <= 0.09, 2P(r) reduced with decrease in the degree of a-axis orientation. These results indicate that the P-r of the films is dependent on the degree of a-axis orientation. (c) 2007 American Institute of Physics.