Effect of ion bombardment on microstructures of carbon nanotubes grown by electron cyclotron resonance chemical vapor deposition at low temperatures

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dc.contributor.authorWoo, YSko
dc.contributor.authorHan, ITko
dc.contributor.authorPark, YJko
dc.contributor.authorKim, HJko
dc.contributor.authorJung, JEko
dc.contributor.authorLee, NSko
dc.contributor.authorJeon, DukYoungko
dc.contributor.authorKim, JMko
dc.date.accessioned2010-05-11T08:13:26Z-
dc.date.available2010-05-11T08:13:26Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-03-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.3, pp.1410 - 1413-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/18214-
dc.description.abstractVertically aligned multi walled carbon nanotubes (MWNTs) were synthesized by electron cyclotron resonance chemical vapor deposition on Ni-coated glass substrates at temperatures as low as 400degreesC. Negative self-biases were applied to the substrates by radio-frequency (RF) plasma for ion bombardment of the growing surface. It was observed that ion bombardment by RF biasing to the substrates had a great effect upon the growth of carbon nanotubes and their morphologies. High-resolution transmission electron microscopy revealed that the degree of ordering of graphene layers in the synthesized nanotubes increased with RF bias. Raman spectroscopic analyses indicated that the shortening of C-C bonds within the graphene layers of the MWNTs occurred at larger negative biases, which seemed to result from removal of bonded hydrogen from the MWNTs by ion bombardment.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherINST PURE APPLIED PHYSICS-
dc.subjectRAMAN-SPECTRA-
dc.subjectDEPENDENCE-
dc.titleEffect of ion bombardment on microstructures of carbon nanotubes grown by electron cyclotron resonance chemical vapor deposition at low temperatures-
dc.typeArticle-
dc.identifier.wosid000182276000062-
dc.identifier.scopusid2-s2.0-0037615162-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.issue3-
dc.citation.beginningpage1410-
dc.citation.endingpage1413-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorJeon, DukYoung-
dc.contributor.nonIdAuthorWoo, YS-
dc.contributor.nonIdAuthorHan, IT-
dc.contributor.nonIdAuthorPark, YJ-
dc.contributor.nonIdAuthorKim, HJ-
dc.contributor.nonIdAuthorJung, JE-
dc.contributor.nonIdAuthorLee, NS-
dc.contributor.nonIdAuthorKim, JM-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcarbon nanotube-
dc.subject.keywordAuthorelectron cyclotron resonance chemical vapor deposition-
dc.subject.keywordAuthorRF biasing-
dc.subject.keywordAuthorion bombardment-
dc.subject.keywordAuthorlow temperature-
dc.subject.keywordPlusRAMAN-SPECTRA-
dc.subject.keywordPlusDEPENDENCE-
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