DC Field | Value | Language |
---|---|---|
dc.contributor.author | Im, WB | ko |
dc.contributor.author | Kim, YI | ko |
dc.contributor.author | Jeon, DukYoung | ko |
dc.date.accessioned | 2010-05-11T07:41:52Z | - |
dc.date.available | 2010-05-11T07:41:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-03 | - |
dc.identifier.citation | CHEMISTRY OF MATERIALS, v.18, no.5, pp.1190 - 1195 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | http://hdl.handle.net/10203/18211 | - |
dc.description.abstract | We have evaluated the thermal stability of BaAl2Si2O8:Eu2+ (BAS:Eu2+) phosphor using its polymorph property and hexagonal and monoclinic crystal structure, depending upon firing temperature for plasma display panel application. When BAS:Eu2+ samples having each characteristic crystal structure were baked at 500 degrees C in air for 30 min, the baked monoclinic BAS:Eu2+ showed the same photoluminescence (PL) intensity as the fresh one, whereas the baked hexagonal one lost its PL intensity significantly, corresponding to about 34%. From analyses of electron spin resonance on Eu2+ and Rietveld refinement, the difference of thermal stability between hexagonal and monoclinic BAS:Eu2+ could be ascribed to both the crystal structure of host materials and the average interatomic distances between the Eu2+ ion and oxygen which plays the key role of shield for Eu2+ ions against an oxidation atmosphere. | - |
dc.description.sponsorship | This study was supported by Korea Science and Engineering Foundation (KOSEF) and Ministry of Science & Technology (MOST), Korean government, through its National Nuclear Technology Program. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | BAMGAL10O17-EU2+ PHOSPHOR | - |
dc.subject | LUMINESCENT PROPERTIES | - |
dc.subject | EU2+ | - |
dc.subject | CAMGSI2O6-EU2+ | - |
dc.subject | REFINEMENT | - |
dc.subject | MECHANISMS | - |
dc.subject | BAKING | - |
dc.title | Thermal stability study of BaAl2Si2O8 : Eu2+ phosphor using its polymorphism for plasma display panel application | - |
dc.type | Article | - |
dc.identifier.wosid | 000235826700018 | - |
dc.identifier.scopusid | 2-s2.0-33644948291 | - |
dc.type.rims | ART | - |
dc.citation.volume | 18 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 1190 | - |
dc.citation.endingpage | 1195 | - |
dc.citation.publicationname | CHEMISTRY OF MATERIALS | - |
dc.identifier.doi | 10.1021/cm051894v | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Jeon, DukYoung | - |
dc.contributor.nonIdAuthor | Im, WB | - |
dc.contributor.nonIdAuthor | Kim, YI | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | BAMGAL10O17-EU2+ PHOSPHOR | - |
dc.subject.keywordPlus | LUMINESCENT PROPERTIES | - |
dc.subject.keywordPlus | EU2+ | - |
dc.subject.keywordPlus | CAMGSI2O6-EU2+ | - |
dc.subject.keywordPlus | REFINEMENT | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | BAKING | - |
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