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1
(A) study on the atomic layer deposition mechanism and characteristics of Ti-N,Ti-Si-N films deposited by cycle­CVD = Cycle-CVD 법으로 증착된 Ti-N, Ti-Si-N 박막의 ALD 증착기구와 특성에 관한 연구link

Min, Jae-Sik; 민재식; et al, 한국과학기술원, 1999

2
Atomic Layer Deposition of TiN Thin Films by Alternate Supply of Tetrakis (ethymethylamino)-Titanium and Ammonia

Min, Jae-Sik; Son, Young-Woong; Kang, Won-Gu; Chun, Soung-Soon; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.0, pp.4999 - 5004, 1999

3
CVD Cu 박막의 특성에 열처리 온도가 미치는 영향 = The effects of the annealed temperature on properties of CVD Cu filmslink

민재식; Min, Jae-Sik; et al, 한국과학기술원, 1995

4
Metal–organic atomic-layer deposition of titanium–silicon–nitride films

Min, Jae-Sik; Park, Hyung-Sang; Kang, Sang-Won, APPLIED PHYSICS LETTERS 99 75(11) 1521-1523, 1999-07-19

5
The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

Min, Jae-Sik; Park, Jin-Seong; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.10, pp.3868 - 3872, 2000-06

6
Theoretical evaluation of film growth rate during atomic layer epitaxy

Park, Hyung-Sang; Min, Jae-Sik; Lim, Jung-Wook; Kang, Sang-Won, APPLIED SURFACE SCIENCE, v.158, no.1-2, pp.81 - 91, 1999-12

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