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Showing results 1 to 7 of 7

1
Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiOx/Active Interface

Jeon, Guk-Jin; Yang, Junghoon; Lee, Seung Hee; Jeong, Wooseok; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.363 - 366, 2021-03

2
Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

Kim, Junsung; Kim, Do Hyung; Cho, Seong-In; Lee, Seung Hee; Jeong, Wooseok; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.42, no.12, pp.1798 - 1801, 2021-12

3
Effect of H-2 addition during PECVD on the moisture barrier property and environmental stability of H:SiNx film

Kim, Jin Kyoo; Jeong, Wooseok; Lee, Seunghee; Jeong, Sehun; Park, Sang-Hee Ko, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.104, no.12, pp.6670 - 6677, 2021-12

4
Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs

Bae, Jaehan; Ma, Boo Soo; Jeon, Gukjin; Jeong, Wooseok; Je, Chang Han; Kim, Taek-Soo; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1760 - 1763, 2019-11

5
Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors

Jeong, Wooseok; Cho, Seong-In; Park, Sang-Hee Ko; Ko, Jong Beom, MATERIALS LETTERS, v.355, 2024-01

6
Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier

Jeong, Wooseok; Winkler, Joerg; Schmidt, Hennrik; Lee, Kwang-Heum; Park, Sang-Hee Ko, JOURNAL OF ALLOYS AND COMPOUNDS, v.859, 2021-04

7
Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics

Cho, Seong-In; Jeon, Jae Bum; Kim, Joo Hyung; Lee, Seung Hee; Jeong, Wooseok; 김진규; Kim, Geunyoung; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.9, no.32, pp.10243 - 10253, 2021-08

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