Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs

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We report how the intrinsic film stress of Mo source and drain (S/D) electrodes affects the electrical properties of Al doped InZnSnO thin-film transistors (TFTs). By controlling the Ar pressure during the sputtering process, Mo films with different film stresses (1948.2 MPa and 168.8 MPa) were formed. Two kinds of TFTs were fabricated applying these films as S/D electrodes. The TFTs made with the high-stress S/D showed linear mobility ( $\mu _{\text {lin}}$ ) of 29.44 cm(2)/Vs and hysteresis of 3.39 V while the TFTs with the low-stress S/D showed $\mu _{\text {lin}}$ of 35.25 cm(2) /Vs and hysteresis of 1.97 V. Under positive bias temperature stress (1 MV/cm, 60 & x00B0;C, 3600 s), $\text{V}_{\text {on}}$ was 4.48 V and 7.28 V for the TFTs with the low-stress S/D and high-stress S/D, respectively. X-ray photoelectron spectroscopy and finite element (FE) simulation results revealed that oxygen deficient sites in the active layer generated by the film stress of the Mo S/D induced degradation of the device characteristics.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-11
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1760 - 1763

ISSN
0741-3106
DOI
10.1109/LED.2019.2942078
URI
http://hdl.handle.net/10203/268867
Appears in Collection
ME-Journal Papers(저널논문)MS-Journal Papers(저널논문)
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