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(A) study of contact properties between Al-based source/drain and indium oxide active layer in top-gate bottom-contact structured thin-film transistors for vertical-TFT = 수직 채널 트랜지스터용 탑 게이트 하단 접촉 구조 박막 트랜지스터에서 알루미늄 기반 소스/드레인과 인듐 산화물 활성층 사이의 접촉 특성 연구link Jeon, Sori; Park, Sang-Hee; et al, 한국과학기술원, 2020 |
Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors Jeon, Sori; Lee, Kwang-Heum; Lee, Seung-Hee; Cho, Seong-In; Hwang, Chi-Sun; Ko, Jong Beom; Park, Sang-Hee Ko, JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.41, pp.14177 - 14186, 2023-10 |
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